Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method-Reference-Cited by-同舟云学术

Insight into Al2O3/B-doped diamond interface states with high-temperature conductance method

Published:2020-08-31 Issue:9 Volume:117 Page:092104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhang Xufang¹²^ORCID,Matsumoto Tsubasa¹²,Sakurai Ukyo²,Makino Toshiharu³,Ogura Masahiko³,Sometani Mitsuru³^ORCID,Yamasaki Satoshi¹³,Nebel Christoph E.¹⁴,Inokuma Takao²,Tokuda Norio¹²^ORCID

Affiliation:

1. Nanomaterials Research Institute, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan

2. Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan

3. Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan

4. Fraunhofer-Institute for Applied Solid State Physics (IAF), Tullastraße 72, Freiburg 79108, Germany

Funder

Kanazawa University

Japan Society for the Promotion of Science

New Energy and Industrial Technology Development Organization

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0021785

Reference38 articles.

1. Time-resolved cyclotron resonance on dislocation-free HPHT diamond

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4. C-H surface diamond field effect transistors for high temperature (400 °C) and high voltage (500 V) operation

5. Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric

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