New method for separating and characterizing interface states and oxide traps on oxidized silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96720
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1. Optically induced injection of hot electrons into SiO2
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4. Characterization of electron traps in SiO2as influenced by processing parameters
5. Electron trapping in SiO2 at 295 and 77 °K
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1. Hysteresis Phenomena in mis Structures Based on Graded-Gap MBE Hgcdte with a Two-Layer Plasma-Chemical Insulator SIO2/SI3N4;Russian Physics Journal;2015-08
2. A new method of studying on the dynamic parameters of bulk traps in thin SiO2 layer of MOS structures;Microelectronics Reliability;2000-06
3. Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors;IEEE Transactions on Nuclear Science;1989-12
4. Generation and annealing of interface traps on oxidized silicon irradiated by keV electrons;Solid-State Electronics;1988-09
5. Effects of hydrogen chloride on the annealing kinetics of interface and oxide traps in oxidized silicon stressed by avalanche electron injection;Solid-State Electronics;1988-07
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