Simultaneous formation of TiN and TiSi2by lamp annealing in NH3ambient and its application to diffusion barriers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.339035
Reference6 articles.
1. TiN formed by evaporation as a diffusion barrier between Al and Si
2. The use of titanium-based contact barrier layers in silicon technology
3. Ambient Gas Effects on the Reaction of Titanium with Silicon
4. Titanium silicidation by halogen lamp annealing
5. Models for contacts to planar devices
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