TaN[sub x] Thin Films Deposited Through Various Flow Ratios of N[sub 2]∕Ar for Copper Barrier Properties-Reference-Cited by-同舟云学术

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TaN[sub x] Thin Films Deposited Through Various Flow Ratios of N[sub 2]∕Ar for Copper Barrier Properties

Published:2008 Issue:11 Volume:155 Page:H852
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Chen Jem Kun,Chan Chia-Hao,Chang Feng-Chih

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Copper-Based Metallization in ULSI Structures: Part II: Is Cu Ahead of Its Time as an On-Chip Interconnect Material?

2. Use of TiN(O)/Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects

3. Multilevel interconnections for ULSI and GSI era

4. Formation of Cu3Si and its catalytic effect on silicon oxidation at room temperature

5. The Cu-Ta (Copper-Tantalum) system

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