Use of TiN(O)/Ti as an effective intermediate stress buffer and diffusion barrier for Cu/parylene-n interconnects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1416156
Reference11 articles.
1. Copper metallization for ULSL and beyond
2. Thermal And Mechanical Properties Of Low K Polymers
3. Diffusion barriers in thin films
4. Diffusion and self‐gettering of ion‐implanted copper in polyimide
5. Crystallography of Poly‐p‐Xylylene
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1. Structural, Optical, and Electronic Properties of Cu-Doped TiNxOy Grown by Ammonothermal Atomic Layer Deposition;ACS Applied Materials & Interfaces;2021-06-28
2. Improvement of thermal stability of Ta-N film in Cu metallization by a Zr-Si interlayer;E3S Web of Conferences;2021
3. Reliability Enhancement of Copper/Porous SiOCH Metallization Systems Using Nitrogen Stuffing and Bias-Filter Sputter Deposited Mn2O3 Barrier;ECS Journal of Solid State Science and Technology;2019
4. Ultra-thin metallic glass film of Zr–Cu–Ni–Al–N as diffusion barrier for Cu–Si interconnects under fully recrystallized temperature;Journal of Materials Science: Materials in Electronics;2018-09-20
5. Structural evolution of Zr-Cu-Ni-Al-N thin film metallic glass and its diffusion barrier performance in Cu-Si interconnect at elevated temperature;Vacuum;2017-08
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