Optoelectronic properties of ultrathin ALD silicon nitride and its potential as a hole-selective nanolayer for high efficiency solar cells
Author:
Affiliation:
1. School of Electronics and Computer Science, University of Southampton, SO17 1BJ Southampton, United Kingdom
2. Department of Materials, University of Oxford, OX1 3PH Oxford, United Kingdom
Funder
Engineering and Physical Sciences Research Council
Royal Academy of Engineering
Publisher
AIP Publishing
Subject
General Engineering,General Materials Science
Link
http://aip.scitation.org/doi/pdf/10.1063/5.0023336
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1. Improvement in Sb2Se3 Solar Cell Efficiency through Band Alignment Engineering at the Buffer/Absorber Interface
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3. A Roadmap Toward 24% Efficient PERC Solar Cells in Industrial Mass Production
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