SiN<sub>x</sub> and AlO<sub>x</sub> Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells-Reference-Cited by-同舟云学术

SiN_x and AlO_x Nanolayers in Hole Selective Passivating Contacts for High Efficiency Silicon Solar Cells

Published:2023-01 Issue:1 Volume:13 Page:22-32
ISSN:2156-3381
Container-title:IEEE Journal of Photovoltaics
language:
Short-container-title:IEEE J. Photovoltaics

Author:

McNab Shona¹^ORCID,Niu Xinya¹^ORCID,Khorani Edris²,Wratten Ailish²^ORCID,Morisset Audrey³^ORCID,Grant Nicholas E.²^ORCID,Murphy John D.²^ORCID,Altermatt Pietro P.⁴^ORCID,Wright Matthew¹^ORCID,Wilshaw Peter R.¹^ORCID,Bonilla Ruy S.¹^ORCID

Affiliation:

1. Materials Department, Oxford University, Oxford, U.K.

2. School of Engineering, University of Warwick, Coventry, U.K.

3. Photovoltaics and Thin Film Electronics Laboratory, Institute of Electrical and Microengineering (IEM), Ecole Polytechnique Fédérale de Lausanne (EPFL), Neuchatel, Switzerland

4. State Key Laboratory for Photovoltaic Science and Technology (SKL PVST), Trina Solar, Changzhou, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/5503869/10015785/09996543.pdf?arnumber=9996543

Reference79 articles.

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4. FS-1 TM Ellipsometer manual;sense,2015

5. n-Type Si solar cells with passivating electron contact: Identifying sources for efficiency limitations by wafer thickness and resistivity variation

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