Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1947384
Reference7 articles.
1. Voids in Silicon by He Implantation: From Basic to Applications
2. Gettering of metals by voids in silicon
3. Overpressurized bubbles versus voids formed in helium implanted and annealed silicon
4. Nanovoid formation in helium-implanted single-crystal silicon studied byin situtechniques
5. Annealing behavior of implanted helium in indium phosphide
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2. Evolution of the properties of helium nanobubbles during in situ annealing probed by spectrum imaging in the transmission electron microscope;Physical Review B;2018-03-07
3. Growth and migration of nanocavities in He+ multi-implanted Si measured by in situ small-angle X-ray scattering;Materials Science and Engineering: B;2014-03
4. A mathematical model for void evolution in silicon by helium implantation and subsequent annealing process;Journal of Applied Physics;2012-09-15
5. Void evolution in silicon under inert and dry oxidizing ambient annealing and the role of a Si1−xGex epilayer cap;Journal of Applied Physics;2012-09
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