Annealing behavior of implanted helium in indium phosphide
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1337643
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1. Plasma Contamination and Wall Erosion in Thermonuclear Reactors
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1. Thermal evolution of defects produced by implantation of H, D and He in Silicon;Applied Surface Science;2008-10
2. The effect of the annealing ramp rate on the formation of voids in silicon;Journal of Physics: Condensed Matter;2007-10-23
3. Effect of annealing temperature ramp rate on bubble formation in helium-implanted silicon;Applied Physics Letters;2005-06-13
4. NRA and ERDA investigation of helium retention in SiC as a function of irradiation and annealing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-06
5. Implant isolation in an indium phosphide optoelectronic device: A scanning spreading resistance microscopy study;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2004
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