Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3μm-Reference-Cited by-同舟云学术

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Electric field modulation of exciton recombination in InAs/GaAs quantum dots emitting at 1.3μm

Published:2008-07 Issue:1 Volume:104 Page:013504
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Miyazawa Toshiyuki,Nakaoka Toshihiro,Usuki Tatsuya,Tatebayashi Jun,Arakawa Yasuhiko,Hirose Shinichi,Takemoto Kazuya,Takatsu Motomu,Yokoyama Naoki

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2947603

Reference44 articles.

1. Multidimensional quantum well laser and temperature dependence of its threshold current

2. Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers

3. A single-photon turnstile device

4. Indistinguishable photons from a single-photon device

5. Generating visible single photons on demand with single InP quantum dots

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of electric field on carrier escape mechanisms in quantum dot intermediate band solar cells;Journal of Applied Physics;2017-01-07

2. Two-Photon Control of Biexciton Population in Telecommunication-Band Quantum Dot;Applied Physics Express;2010-05-21

3. Tuning photoluminescence of single InAs quantum dot by electric field;Acta Physica Sinica;2010

4. Sub-GHz operation of single-photon emitting diode at 1.55 μm;SPIE Proceedings;2009-02-12

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