Author:
Chang Xiu-Ying ,Dou Xiu-Ming ,Sun Bao-Quan ,Xiong Yong-Hua ,Ni Hai-Qiao ,Niu Zhi-Chuan ,
Abstract
By using photoluminescence (PL) and time-resolved PL spectra， the optical properties of single InAs quantum dot (QD) embedded in the p-i-n structure have been studied under an applied electric field. With the increasing of electric field， the exciton lifetime increases due to the Stark effect. We noticed that the decrease or quenching of PL intensity with increasing the electric field is mainly due to the decrease of the carriers captured by QD.
Publisher
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Subject
General Physics and Astronomy
Cited by
1 articles.
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