Characteristics of pseudomorphic AlGaAs/InxGa1−xAs (0≤x≤0.25) doped‐channel field‐effect transistors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.357608
Reference10 articles.
1. Novel pseudomorphic high electron mobility transistor structures with GaAs‐In0.3Ga0.7As thin strained superlattice active layers
2. p‐channel, strained quantum well, field‐effect transistor
3. In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (0.53>or=x>or=0.70) lattice-matched and strained heterostructure insulated-gate FETs
4. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes
5. Stability of strained quantum-well field-effect transistor structures
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