SIMS study of oxygen diffusion in monoclinic HfO2
Author:
Affiliation:
1. Institute of Physical Chemistry, RWTH Aachen University, 52056 Aachen, Germany
2. JARA-FIT, 52056 Aachen, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5020370
Reference35 articles.
1. Electronic properties of hafnium oxide: A contribution from defects and traps
2. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
3. Ferroelectricity in hafnium oxide thin films
4. Measurement of oxygen diffusion in nanometer scale HfO2 gate dielectric films
5. Molecular dynamics simulation of amorphous HfO2for resistive RAM applications
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