Growth of a-plane GaN on lattice-matched ZnO substrates using a room-temperature buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2809361
Reference23 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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5. Polarization anisotropy in the electroluminescence of m-plane InGaN–GaN multiple-quantum-well light-emitting diodes
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1. Polarization-dependent XEOL: Comparison of peculiar near-band-edge emission of non-polar a-plane GaN and ZnO wafers;Applied Physics Letters;2019-03-04
2. Electronic structure and ferromagnetic properties of Zn vacancies in ZnO screw dislocations: First-principles calculations;AIP Advances;2018-06
3. Peculiar near-band-edge emission of polarization-dependent XEOL from a non-polar a-plane ZnO wafer;Optics Express;2018-01-25
4. GaN Nanowall Network: Laser Assisted Molecular Beam Epitaxy Growth and Properties;Recent Trends in Nanomaterials;2017
5. Structural modulation of nanowire interfaces grown over selectively disrupted single crystal surfaces;SPIE Proceedings;2015-08-26
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