Polarization-dependent XEOL: Comparison of peculiar near-band-edge emission of non-polar a-plane GaN and ZnO wafers
Author:
Affiliation:
1. National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan
2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan
Funder
Ministry of Science and Technology, Taiwan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5066588
Reference26 articles.
1. Silane-Induced N-Polarity in Wires Probed by a Synchrotron Nanobeam
2. Synthesis and Structure-Dependent Optical Properties of ZnO Nanocomb and ZnO Nanoflag
3. Defect studies in electron-irradiated ZnO and GaN
4. p-GaN/n-ZnO Heterojunction Nanowires: Optoelectronic Properties and the Role of Interface Polarity
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