Mechanism of arsenic incorporation and electrical properties in CdTe layers grown by metalorganic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351039
Reference26 articles.
1. p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy
2. High quality planar HgCdTe photodiodes fabricated by the organometallic epitaxy (Direct Alloy Growth Process)
3. Arsenic‐doped CdTe epilayers grown by photoassisted molecular beam epitaxy
4. p‐type arsenic doping of CdTe and HgTe/CdTe superlattices grown by photoassisted and conventional molecular‐beam epitaxy
5. Arsenic‐dopedp‐CdTe layers grown by organometallic vapor phase epitaxy
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