p‐i‐nHgCdTe photodiodes grown by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104742
Reference17 articles.
1. Recent developments in cadmium mercury telluride infrared detectors
2. Intrinsic infrared detectors
3. New achievements in Hg1−xCdxTe grown by molecular-beam epitaxy
4. Characterization of HgCdTe Epilayers and HgTe-CdTe Superlattice Structures Grown by Molecular Beam Epitaxy
5. Long and middle wavelength infrared photodiodes fabricated with Hg1−xCdxTe grown by molecular‐beam epitaxy
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2. p-type HgTe/CdTe superlattices for very-long wavelength infrared detectors;Journal of Electronic Materials;2006-06
3. A model for dark current and multiplication in HgCdTe avalanche photodiodes;Journal of Electronic Materials;2000-06
4. Molecular beam epitaxy of HgCdTe;Narrow-gap II–VI Compounds for Optoelectronic and Electromagnetic Applications;1997
5. Band structures of II-VI semiconductors using Gaussian basis functions with separableab initiopseudopotentials: Application to prediction of band offsets;Physical Review B;1996-01-15
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