Impact of dopant-induced optoelectronic tails on open-circuit voltage in arsenic-doped Cd(Se)Te solar cells
Author:
Affiliation:
1. National Renewable Energy Laboratory, Golden, Colorado 80401, USA
2. First Solar, Santa Clara, California 95050, USA
Funder
Solar Energy Technologies Office
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/5.0018955
Reference62 articles.
1. Exceeding 20% efficiency with in situ group V doping in polycrystalline CdTe solar cells
2. Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping
3. Enhanced p-Type Doping in Polycrystalline CdTe Films: Deposition and Activation
4. Study of thin film poly-crystalline CdTe solar cells presenting high acceptor concentrations achieved by in-situ arsenic doping
5. The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells
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