Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping-Reference-Cited by-同舟云学术

Overcoming Carrier Concentration Limits in Polycrystalline CdTe Thin Films with In Situ Doping

Published:2018-09-28 Issue:1 Volume:8 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

McCandless Brian E.^ORCID,Buchanan Wayne A.,Thompson Christopher P.^ORCID,Sriramagiri Gowri,Lovelett Robert J.^ORCID,Duenow Joel,Albin David,Jensen Søren,Colegrove Eric^ORCID,Moseley John,Moutinho Helio,Harvey Steve^ORCID,Al-Jassim Mowafak,Metzger Wyatt K.

Funder

DOE | LDRD | National Renewable Energy Laboratory

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-018-32746-y.pdf

Reference43 articles.

1. Burst, J. M. et al. CdTe solar cells with open-circuit breaking the 1V barrier. Nature Energy 16015, 1–7, https://doi.org/10.1038/NENERGY.2016.1 (2016).

2. Kanevce, A., Reese, M. O., Barnes, T. M., Jensen, S. A. & Metzger, W. K. The roles of carrier concentration and interface, bulk, and grain-boundary recombination for 25% efficient CdTe solar cells. J. Appl. Phys. 121(21), 214506, 1–9, https://doi.org/10.1063/1.4984320 (2017).

3. Marfaing, Y. Impurity doping and compensation mechanisms in CdTe. Thin Solid Films 387, 123–128, https://doi.org/10.1016/S0040-6090(00)01717-X (2001).