Very-low-specific-resistance Pd/Ag/Au/Ti/Au alloyed ohmic contact to p GaN for high-current devices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1353813
Reference18 articles.
1. Photoreflectance study of H2S plasma-passivated GaAs surface
2. Low-resistance ohmic contacts to p-type GaN
3. Low resistance Pd/Au ohmic contacts to p-type GaN using surface treatment
4. Ohmic contact formation mechanism of nonalloyed Pd contacts to p-type GaN observed by positron annihilation spectroscopy
5. Schottky barriers and contact resistances onp‐type GaN
Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Simple Edge Termination Design for Vertical GaN P-N Diodes;IEEE Transactions on Electron Devices;2022-09
2. Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height;Photonics Research;2020-06-01
3. Recent research on ohmic contacts on GaN-based materials;IOP Conference Series: Materials Science and Engineering;2020-01-01
4. A p-Channel GaN Heterostructure Tunnel FET With High ON/OFF Current Ratio;IEEE Transactions on Electron Devices;2019-07
5. Gallium nitride electronics for very hot environments;Extreme-Temperature and Harsh-Environment Electronics Physics, technology and applications;2017
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3