Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor-Reference-Cited by-同舟云学术

Lateral plasma etching enhanced on/off ratio in graphene nanoribbon field-effect transistor

Published:2015-01-19 Issue:3 Volume:106 Page:033509
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sun Jian¹,Iwasaki Takuya¹,Muruganathan Manoharan¹,Mizuta Hiroshi¹²

Affiliation:

1. School of Materials Science, Japan Advanced Institute of Science and Technology, Nomi 923-1211, Japan

2. Nanoelectronics and Nanotechnologies Research Group, Faculty of Physical Sciences and Engineering, University of Southampton, Highfield, Southampton SO17 1BJ, United Kingdom

Funder

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4906609

Reference12 articles.

1. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors

2. Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography

3. Site- and alignment-controlled growth of graphene nanoribbons from nickel nanobars

4. Meniscus-Mask Lithography for Narrow Graphene Nanoribbons

5. Electron Transport in Disordered Graphene Nanoribbons

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