Electrochemical capacitance‐voltage analysis of delta‐doped pseudomorphic high electron mobility transistor material
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111471
Reference8 articles.
1. Capacitance‐voltage profiling through graded heterojunctions: Theory and experiment
2. Spatial localization and diffusion of atomic silicon in delta-doped GaAs
3. Influence of theDXcenter on the capacitance‐voltage characteristics of δ‐doped GaAs
4. Theory and experiment of capacitance-voltage profiling on semiconductors with quantum-confinement
5. Si delta‐doped layers of GaAs by low pressure metalorganic vapor phase epitaxy
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2. Optical determination of the dopant concentration in the δ-doping layer;Journal of Applied Physics;2002-07
3. Charge accumulation of quantum dots at room temperature;Journal of Electronic Materials;2000-11
4. Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure;Applied Physics Letters;1999-03-29
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