Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure-Reference-Cited by-同舟云学术

Room-temperature photoluminescence, contactless electroreflectance, and x-ray characterization of a double-side delta-doped GaAlAs/InGaAs high electron mobility transistor structure

Published:1999-03-29 Issue:13 Volume:74 Page:1851-1853
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Y. S.,Sun W. D.,Malikova L.,Pollak Fred H.,Ferguson I.,Hou H.,Feng Z. C.,Ryan T.,Fantner E. B.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.123690

Reference13 articles.

1. Pseudomorphic high-electron-mobility transistors with low-temperature-grown GaAs buffers

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3. MOCVD growth of high power 0.5W 35GHz MMICs

4. Quantitative characterization of modulation‐doped strained quantum wells through line‐shape analysis of room‐temperature photoluminescence spectra

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