Tunneling current in HfO2 and Hf0.5Zr0.5O2-based ferroelectric tunnel junction
Author:
Affiliation:
1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611, USA
2. Global Memory Solutions, GLOBALFOUNDREIS, Inc., Santa Clara, California 95054, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5016823
Reference29 articles.
1. Ferroelectric tunnel junctions for information storage and processing
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4. Electronic band alignment and electron transport in Cr/BaTiO3/Pt ferroelectric tunnel junctions
5. Tunnel electroresistance in junctions with ultrathin ferroelectric Pb(Zr0.2Ti0.8)O3 barriers
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