248nm cathodoluminescence in Al1−xInxN(0001) thin films grown on lattice-matched Ti1−yZryN(111) seed layers by low temperature magnetron sputter epitaxy-Reference-Cited by-同舟云学术

248nm cathodoluminescence in Al1−xInxN(0001) thin films grown on lattice-matched Ti1−yZryN(111) seed layers by low temperature magnetron sputter epitaxy

Published:2006-10-30 Issue:18 Volume:89 Page:181928
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Seppänen T.,Hultman L.,Birch J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2382746

Reference14 articles.

1. Gallium nitride and related materials: challenges in materials processing

2. GaN, AlN, and InN: A review

3. Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy

4. Growth and characterization of AlInN on AlN template

5. Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells

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