Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108611
Reference10 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. AlInAs-GaInAs HEMTs utilizing low-temperature AlInAs buffers grown by MBE
3. Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAs
4. Subpicosecond photoresponse of carriers in low‐temperature molecular beam epitaxial In0.52Al0.48As/InP
5. Structural characterization of low‐temperature molecular beam epitaxial In0.52Al0.48As/InP heterolayers
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1. First demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate;Solid-State Electronics;1999-08
2. Analysis of V/III incorporation in nonstoichiometric GaAs and InP films using SIMS;Journal of Electronic Materials;1998-05
3. AlInAs/InP Heterostructures for Fet Application Grown at Low Temperatures;Heterostructure Epitaxy and Devices — HEAD’97;1998
4. Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition;Journal of Crystal Growth;1996-09
5. Investigations of positron lifetimes in InP with a pulsed positron beam;Applied Physics A Materials Science & Processing;1995-09
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