Low-temperature epitaxial growth of InP by remote plasma-assisted metalorganic chemical vapour deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. New MBE buffer used to eliminate backgating in GaAs MESFETs
2. Picosecond GaAs‐based photoconductive optoelectronic detectors
3. 1.3- mu m P-i-N photodetector using GaAs with As precipitates (GaAs:As)
4. Electrical properties of InP grown by gas‐source molecular beam epitaxy at low temperature
5. Formation of P precipitates during annealing of InP grown by gas source molecular beam epitaxy at low temperature
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1. Ab initio calculations and spectral simulation of the photodetachment process;Journal of Molecular Structure: THEOCHEM;2006-08
2. Photoelectron spectroscopy of phosphorus hydride anions;The Journal of Chemical Physics;2005-05-15
3. Characterization of InGaAs/InP single quantum well structure on GaAs substrate with metamorphic buffer grown by molecular beam epitaxy;Journal of Crystal Growth;2004-01
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