Abrupt dependence of ultrafast extrinsic photoconductivity on Er fraction in GaAs:Er
Author:
Affiliation:
1. Terahertz Sensor Laboratory, Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435, USA
2. Applied Physics Division, National Institute of Standards and Technology, Boulder, Colorado 80305, USA
Funder
the US. Army Research Office
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4991876
Reference20 articles.
1. Picosecond carrier lifetime in erbium‐doped‐GaAs
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4. Self-assembled ErAs islands in GaAs: Growth and subpicosecond carrier dynamics
5. Electronic structure and conduction in a metal–semiconductor digital composite: ErAs:InGaAs
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