Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation-Reference-Cited by-同舟云学术

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Material properties and performance of ErAs:In(Al)GaAs photoconductors for 1550 nm laser operation

Published:2021-03 Issue:2 Volume:39 Page:023407
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A
language:en
Short-container-title:Journal of Vacuum Science & Technology A

Author:

Nandi U.¹,Mohammadi M.²,Lu H.³^ORCID,Norman J.⁴^ORCID,Gossard A. C.⁴,Alff L.²,Preu S.¹

Affiliation:

1. Department of Electrical Engineering and Information Technology, TU Darmstadt, 64283 Darmstadt, Germany

2. Institute of Materials Science, TU Darmstadt, 64287 Darmstadt, Germany

3. College of Engineering and Applied Sciences, Nanjing University, 210093 Nanjing, China

4. Materials Department, University of California, Santa Barbara, Santa Barbara, California 93106

Funder

Deutsche Forschungsgemeinschaft

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://avs.scitation.org/doi/pdf/10.1116/6.0000773

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band Engineering of ErAs:InGaAlBiAs Nanocomposite Materials for Terahertz Photoconductive Switches Pumped at 1550 nm;Advanced Functional Materials;2024-04-18

2. Advances in actinide thin films: synthesis, properties, and future directions;Reports on Progress in Physics;2022-10-26

3. Group IV THz large area emitter based on GeSn alloy;Optics Letters;2022-08-25

4. Bias-Dependent Carrier Dynamics and Terahertz Performance of ErAs:In(Al)GaAs Photoconductors;IEEE Transactions on Terahertz Science and Technology;2022-07

5. Photoconductive emitters for pulsed terahertz generation;Journal of Optics;2021-04-27

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