Picosecond carrier lifetime in erbium‐doped‐GaAs
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108764
Reference7 articles.
1. Excitation mechanisms of rare earth (Yb) luminescence in III-V semiconductors (InP)
2. Optical studies of erbium excited states in Ga0.55Al0.45As
3. Picosecond optical electronic sampling: Characterization of high‐speed photodetectors
4. 1 THz-bandwidth proper for high-speed devices and integrated circuits
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