Effects of avalanche injection of electrons into silicon dioxide—generation of fast and slow interface states
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.328565
Reference36 articles.
1. Electrochemical Charging of Thermal SiO2 Films by Injected Electron Currents
2. Capture of electrons into Na+‐related trapping sites in the SiO2layer of MOS structures at 77 °K
3. Electron‐trapping characteristics of W in SiO2
4. Electron trapping and detrapping characteristics of arsenic‐implanted SiO2layers
5. Electron trapping by radiation‐induced charge in MOS devices
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