Advanced germanium layer transfer for ultra thin body on insulator structure-Reference-Cited by-同舟云学术

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Advanced germanium layer transfer for ultra thin body on insulator structure

Published:2016-12-26 Issue:26 Volume:109 Page:262104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Maeda Tatsuro,Chang Wen-Hsin,Irisawa Toshifumi,Ishii Hiroyuki,Hattori Hiroyuki,Poborchii Vladimir,Kurashima Yuuichi,Takagi Hideki,Uchida Noriyuki

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4973405

Reference17 articles.

1. Local epitaxial growth of ZrO2 on Ge (100) substrates by atomic layer epitaxy

2. High mobility Ge-on-insulator p-channel MOSFETs using Pt germanide Schottky source/drain

3. Impact of back interface passivation on electrical properties of ultrathin-body Germanium-on-insulator (GeOI) MOSFETs

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1. Layer transfer of epitaxially grown Ge-lattice-matched Si27.8Ge64.2Sn8 films;Materials Science in Semiconductor Processing;2024-06

2. Direct bonding of Germanium and Diamond substrates by reduction process;2024 International Conference on Electronics Packaging (ICEP);2024-04-17

3. Sustainable Production of Ultrathin Ge Freestanding Membranes;Sustainability;2024-02-08

4. Wafer-scale Ge freestanding membranes for lightweight and flexible optoelectronics;Materials Today Advances;2023-06

5. Mobility improvement in accumulation-mode GeOI pMOSFETs with back interface rearrangement by H₂ annealing;Applied Physics Express;2022-05-20

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