Insitulaser reflectometry study of the morphology of Ge/GaAs layers during their heteroepitaxial growth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359625
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1. Relationship among reflectance‐difference spectroscopy, surface photoabsorption, and spectroellipsometry
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3. Complex refractive indices of AlGaAs at high temperatures measured by in situ reflectometry during growth by metalorganic chemical vapor deposition
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3. Effect of film growth rate and thickness on properties of Ge/GaAs(100) thin films;Thin Solid Films;2014-01
4. Modeling of laser reflectance evolution during metalorganic vapor phase epitaxy growth of GaN using SiN treatment;Applied Surface Science;2006-10
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