Sb adsorption on Si 〈111〉 analyzed by ellipsometry and reflection high‐energy electron diffraction: Consequences for Sb doping in Si molecular‐beam epitaxy-Reference-Cited by-同舟云学术

Sb adsorption on Si 〈111〉 analyzed by ellipsometry and reflection high‐energy electron diffraction: Consequences for Sb doping in Si molecular‐beam epitaxy

Published:1991-02 Issue:3 Volume:69 Page:1366-1370
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Andrieu Stéphane

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.347274

Reference21 articles.

1. Kinetics of Antimony Doping in Silicon Molecular Beam Epitaxy

2. The interaction of Sb4 molecular beams with Si(100) surfaces: Modulated-beam mass spectrometry and thermally stimulated desorption studies

3. Charged-particle interaction with liquids: Ripplon excitations

4. In situ spectroscopic ellipsometry: Application to Sb coverage measurement in the monolayer range on Si (111)

5. Antimony adsorption on silicon (111) analyzed in real time by in situ ellipsometry

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