Ferroelectric nanodomains in epitaxial GeTe thin films-Reference-Cited by-同舟云学术

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Ferroelectric nanodomains in epitaxial GeTe thin films

Published:2021-12-23 Issue:12 Volume:5 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Croes Boris^ORCID,Cheynis Fabien,Zhang Yide^ORCID,Voulot Cédric^ORCID,Dorkenoo Kokou Dodzi,Cherifi-Hertel Salia^ORCID,Mocuta Cristian^ORCID,Texier Michaël,Cornelius Thomas^ORCID,Thomas Olivier,Richard Marie-Ingrid,Müller Pierre^ORCID,Curiotto Stefano^ORCID,Leroy Frédéric^ORCID

Funder

Agence Nationale de la Recherche

LabEx NIE

French Programme d'Investissement d'Avenir

IdEx Unistra

SFRI STRATUS

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.5.124415/fulltext

Reference57 articles.

1. Effect of Mechanical Boundary Conditions on Phase Diagrams of Epitaxial Ferroelectric Thin Films

2. Physics of thin-film ferroelectric oxides

3. Ferroelectrics at the nanoscale

4. Polar Domains in Lead Titanate Films under Tensile Strain

5. Flexoelectric rotation of polarization in ferroelectric thin films

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Domain Wall Migration-Mediated Ferroelectric Switching and Rashba Effect Tuning in GeTe Thin Films;ACS Applied Electronic Materials;2024-04-25

2. Polarization structure of nanostrip domain intersections in GeTe films;Physical Review B;2024-01-16

3. Thermomechanic behavior of epitaxial GeTe ferroelectric films;Journal of Applied Physics;2023-11-27

4. Van der Waals Ferroelectrics: Theories, Materials, and Device Applications;Advanced Materials;2023-11-02

5. Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe;Applied Physics Letters;2023-07-31

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