Van der Waals Ferroelectrics: Theories, Materials, and Device Applications

Author:

Li Shuhui12ORCID,Wang Feng12,Wang Yanrong12,Yang Jia12,Wang Xinyuan12,Zhan Xueying12,He Jun23,Wang Zhenxing12ORCID

Affiliation:

1. CAS Key Laboratory of Nanosystem and Hierarchical Fabrication National Center for Nanoscience and Technology Beijing 100190 P. R. China

2. Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100190 P. R. China

3. Key Laboratory of Artificial Micro‐ and Nano‐structures of Ministry of Education School of Physics and Technology Wuhan University Wuhan 430072 P. R. China

Abstract

AbstractIn recent years, an increasing number of 2D van der Waals (vdW) materials are theory‐predicted or laboratory‐validated to possess in‐plane (IP) and/or out‐of‐plane (OOP) spontaneous ferroelectric polarization. Due to their dangling‐bond‐free surfaces, interlayer charge coupling, robust polarization, tunable energy band structures, and compatibility with silicon‐based technologies, vdW ferroelectric materials exhibit great promise in ferroelectric memories, neuromorphic computing, nanogenerators, photovoltaic devices, spintronic devices, and so on. Here, the very recent advances in the field of vdW ferroelectrics (FEs) are reviewed. First, theories of ferroelectricity are briefly discussed. Then, a comprehensive summary of the non‐stacking vdW ferroelectric materials is provided based on their crystal structures and the emerging sliding ferroelectrics. In addition, their potential applications in various branches/frontier fields are enumerated, with a focus on artificial intelligence. Finally, the challenges and development prospects of vdW ferroelectrics are discussed.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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