Contactless electroreflectance evidence for reduction in the surface potential barrier in AlGaN/GaN heterostructures passivated by SiN layer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3009956
Reference27 articles.
1. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. Gate leakage current mechanisms in AlGaN/GaN heterostructure field-effect transistors
5. Environmental aging of Schottky contacts to n-AlGaN
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1. SiNx/(Al,Ga)N interface barrier in N-polar III-nitride transistor structures studied by modulation spectroscopy;Scientific Reports;2020-07-21
2. Electromodulation spectroscopy of highly mismatched alloys;Journal of Applied Physics;2019-10-14
3. Structure and Interface Analysis of Diamond on an AlGaN/GaN HEMT Utilizing an in Situ SiNx Interlayer Grown by MOCVD;ACS Applied Electronic Materials;2019-07-19
4. Contactless electroreflectance spectroscopy of ZnO/ZnMgO quantum wells: Optical transitions and Fabry-Perot features;physica status solidi (a);2015-01-16
5. Surface donor states distribution post SiN passivation of AlGaN/GaN heterostructures;Applied Physics Letters;2014-07-21
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