Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure
Author:
Affiliation:
1. Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375, USA
Funder
Office of Naval Research (ONR)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/12/1.4905452.pdf?itemId=/content/aip/journal/adva/4/12/10.1063/1.4905452&mimeType=pdf&containerItemId=content/aip/journal/adva
Reference34 articles.
1. Emerging silicon and non-silicon nanoelectronic devices: opportunities and challenges for future high-performance and low-power computational applications (invited paper)
2. Carrier Transport in High-Mobility III–V Quantum-Well Transistors and Performance Impact for High-Speed Low-Power Logic Applications
3. Benchmarking Nanotechnology for High-Performance and Low-Power Logic Transistor Applications
4. Considerations for Ultimate CMOS Scaling
5. Enhanced hole mobility and density in GaSb quantum wells
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning;Applied Physics Letters;2019-12-02
2. Interfacial characteristics of Y2O3/GaSb(001) grown by molecular beam epitaxy and atomic layer deposition;Journal of Crystal Growth;2017-11
3. Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2017-01
4. Interface Characterization of HfO2/GaSb MOS Capacitors With Ultrathin Equivalent Oxide Thickness by Using Hydrogen Plasma Treatment;IEEE Transactions on Electron Devices;2016-09
5. Electronic properties of atomic-layer-deposited high-k dielectrics on GaSb(001) with hydrogen plasma pretreatment;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2015-07
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3