Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition-Reference-Cited by-同舟云学术

Effects of GaSb surface preparation on the characteristics of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors prepared by atomic layer deposition

Published:2017-01 Issue:1 Volume:35 Page:01B106
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Hsueh Wei-Jen¹,Chen Cheng-Yu¹,Chang Chao-Min¹,Chyi Jen-Inn²,Huang Mao-Lin³

Affiliation:

1. Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan

2. Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan and Research Center for Applied Sciences, Academia Sinica, Taipei 11529, Taiwan

3. Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu 30078, Taiwan

Funder

Ministry of Science and Technology, Taiwan (MOST)

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4967233

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