151 kA/cm2 peak current densities in Si/SiGe resonant interband tunneling diodes for high-power mixed-signal applications
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1618927
Reference12 articles.
1. A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
2. An efficient HBT/RTD oscillator for wireless applications
3. Resonant tunneling in semiconductor double barriers
4. Room temperature operation of epitaxially grown Si/Si0.5Ge0.5/Si resonant interband tunneling diodes
5. Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy
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