Microstructure and strain relaxation in organometallic vapor phase epitaxy of strain-compensated GaInP/InAsP multilayers on InP(001)
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365049
Reference35 articles.
1. InAsP/InGaP All-Ternary Strain-Compensated Multiple Quantum Wells and Their Application to Long-Wavelength Lasers
2. Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 μm wavelength
3. Strain‐compensated InAsP/GaInP multiple quantum wells for 1.3 μm waveguide modulators
4. Quantum confined Stark effect near 1.5 μm wavelength in InAs0.53P0.47/GayIn1−yP strain-balanced quantum wells
5. Growth of strain‐balanced InAsP/InGaP superlattices for 1.06 μm optical modulators
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1. High Power Quantum Cascade Laser at λ 5.1 μm Based on Low Strain Compensation Design;Journal of Nanoscience and Nanotechnology;2018-11-01
2. MOVPE Growth of LWIR AlInAs/GaInAs/InP Quantum Cascade Lasers: Impact of Growth and Material Quality on Laser Performance;IEEE Journal of Selected Topics in Quantum Electronics;2017-11
3. Thickness modulation and strain relaxation in strain-compensated InGaP/InGaP multiple-quantum-well structure grown by metalorganic molecular beam epitaxy on GaAs (100) substrate;Journal of Crystal Growth;2016-09
4. Lattice-Matched and Strain-Compensated Materials for Mid-Wave and Long-Wave Infrared Quantum Cascade Lasers;ECS Transactions;2011-10-04
5. Strain-compensated GaInAs/AlInAs/InP quantum cascade laser materials;Journal of Crystal Growth;2010-04
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