Strain compensated InAsP/InP/InGaP multiple quantum well for 1.5 μm wavelength
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.112627
Reference10 articles.
1. High-performance λ=1.3 μm InGaAsP-InP strained-layer quantum well lasers
2. Optimization of multiple quantum well structures for waveguide electroabsorption modulators
3. Growth of GaAs1−xPx/GaAs and InAsxP1−x/InP strained quantum wells for optoelectronic devices by gas-source molecular beam epitaxy
4. Multiple quantum well light modulators for the 1.06 μm range on InP substrates: InxGa1−xAsyP1−y/InP, InAsyP1−y/InP, and coherently strained InAsyP1−y/InxGa1−xP
5. Electroabsorption of InAsP/InP strained multiple quantum wells for 1.3 μm waveguide modulators
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1. Strain effects on highly strained InAsP/InGaP multi-quantum well structures grown by MOVPE using TBAs and TBP;Journal of Crystal Growth;2004-05
2. The influence of InGaP barrier layer on the characteristics of 1.3 μm strain-compensated multiquantum-well InAsP/InP/InGaP laser diodes;Solid-State Electronics;2002-09
3. Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications;Physica E: Low-dimensional Systems and Nanostructures;2002-03
4. Fabrication of strain-balanced Si0.73Ge0.27/Si distributed Bragg reflectors on Si substrates;Applied Physics Letters;2001-07-23
5. Fabrication of strain-balanced Si/Si1−xGex multiple quantum wells on Si1−yGey virtual substrates and their optical properties;Applied Physics Letters;2001-07-16
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