The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory-Reference-Cited by-同舟云学术

The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory

Published:2013-05-20 Issue:20 Volume:102 Page:203507
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Huang Jen-Wei,Zhang Rui,Chang Ting-Chang,Tsai Tsung-Ming,Chang Kuan-Chang,Lou J. C.,Young Tai-Fa,Chen Jung-Hui,Chen Hsin-Lu,Pan Yin-Chih,Huang Xuan,Zhang Fengyan,Syu Yong-En,Sze Simon M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4807577

Reference22 articles.

1. Behaviors of InGaZnO thin film transistor under illuminated positive gate-bias stress

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4. A metal/Al2O3/ZrO2/SiO2/Si (MAZOS) structure for high-performance non-volatile memory application

5. Developments in nanocrystal memory

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