Impact ionization coefficients for electrons and holes in In0.14Ga0.86As
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.88489
Reference10 articles.
1. Efficient LPE‐grown Inx Ga1 −x As LEDs at 1–1.1‐μm wavelengths
2. Efficient LPE‐grown Inx Ga1 −x As LEDs at 1–1.1‐μm wavelengths
3. Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μm
4. Multiplication noise in uniform avalanche diodes
5. Ionization Rates for Holes and Electrons in Silicon
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