Efficient LPE‐grown Inx Ga1 −x As LEDs at 1–1.1‐μm wavelengths
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1655416
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1. Simulation studies of liquid phase epitaxial growth of In1 −xGaxAs;Materials Science and Engineering: B;1996-06
2. Studies of the initial stages of liquid phase epitaxy growth of InGaAs on GaAs;Materials Science and Engineering: B;1996-03
3. Alloy scattering and lattice strain effects on the electron mobility in In1−xGaxAs;Solid-State Electronics;1991-10
4. Alloy disorder scattering contribution to low‐temperature electron mobility in semiconductor quantum well structures;Journal of Applied Physics;1984-07-15
5. Long-wavelength optical fiber communication;Proceedings of the IEEE;1983
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