Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors-Reference-Cited by-同舟云学术

Spatial Mapping of Electroluminescence Due to Impact Ionization in High Electron Mobility Transistors

Published:2000-10 Issue:10 Volume:54 Page:1423-1428
ISSN:0003-7028
Container-title:Applied Spectroscopy
language:en
Short-container-title:Appl Spectrosc

Author:

Gaquiere C.¹,Boudart B.¹,Dhamelincourt P. A.¹

Affiliation:

1. Institut d'Electronique et de Microélectronique du Nord, Avenue Poincaré — BP 69, 59652 Villeneuve d'Ascq, France (C.G., B.B.); and Laboratoire de Spectrochimie Infrarouge et Raman, Centre d'Etudes et de Recherches Lasers et Applications, USTL Bat. C5 59655, Villeneuve d'Ascq, France (P.A.D.)

Abstract

For the first time to our knowledge, the use of a Raman microspectrometer is proposed for recording electroluminescence spectra as well as generating complete electroluminescence maps of areas selected on the surface of a pseudomorphic high electron mobility transistor (PHEMT). More particularly, this microspectrometer was used to investigate the impact ionization effect in different regions of the PHEMT located between gate and drain.

Publisher

SAGE Publications

Subject

Spectroscopy,Instrumentation

Link

http://journals.sagepub.com/doi/pdf/10.1366/0003702001948484

Reference9 articles.

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3. Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates

4. A high aspect ratio design approach to millimeter-wave HEMT structures

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