Optical characterization of Eu-doped β-Ga2O3 thin films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2208368
Reference17 articles.
1. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
2. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
3. Anisotropy of electrical and optical properties in β-Ga2O3 single crystals
4. Ga2O3films for electronic and optoelectronic applications
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2. Structure-property correlation of europium doped β-Ga2O3: an experimental and first-principle study;Journal of Materials Science: Materials in Electronics;2023-10
3. UV–Vis luminescence in β-Ga2O3: Eu nanopowders obtained by mechano-chemical synthesis;Applied Nanoscience;2023-05-30
4. Temperature-Dependent Anisotropic Refractive Index in β-Ga2O3: Application in Interferometric Thermometers;Nanomaterials;2023-03-21
5. Interface engineering in epitaxial growth of sputtered β-Ga2O3 films on Si substrates via TiN (111) buffer layer for Schottky barrier diodes;Materials Today Advances;2023-03
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