Use of atomic layer epitaxy buffer for the growth of InSb on GaAs by molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.347608
Reference25 articles.
1. Growth of Sb and InSb by molecular‐beam epitaxy
2. Properties of MBE grown InSb and InSb1−xBix
3. Molecular‐beam epitaxial growth and electrical properties of lattice mismatched InAs1−xSbxon (100) GaAs
4. Growth of InSb and InAs1−xSbxon GaAs by molecular beam epitaxy
5. Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy
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