Recombination lifetimes and surface recombination velocities of minority carriers inn‐pjunctions. A new method for their determination by means of a stationary amplitude‐modulated electron beam-Reference-Cited by-同舟云学术

Recombination lifetimes and surface recombination velocities of minority carriers inn‐pjunctions. A new method for their determination by means of a stationary amplitude‐modulated electron beam

Published:1979-05 Issue:5 Volume:50 Page:3738-3742
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

von Roos Oldwig

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.326280

Reference11 articles.

1. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes

2. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes

3. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes

4. Scanning Electron Microscope Characterization of GaP Red‐Emitting Diodes

5. Electron‐Beam Excited Minority‐Carrier Diffusion Profiles in Semiconductors

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3. ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS;Le Journal de Physique IV;1991-12

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