Electron‐Beam Excited Minority‐Carrier Diffusion Profiles in Semiconductors
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661375
Reference13 articles.
1. Quantum Efficiency and Radiative Lifetime in p‐Type Gallium Arsenide
2. RADIATIVE PAIR RECOMBINATION AND SURFACE RECOMBINATION IN GaP PHOTOLUMINESCENCE
3. Measurement of Diffusion Lengths in Direct‐Gap Semiconductors by Electron‐Beam Excitation
4. Measurement of Diffusion Lengths in p‐Type Gallium Arsenide by Electron Beam Excitation
5. Theory and Experiment for a Germaniump−nJunction
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